4,625 Results for : extremely

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    STP24N60DM2 - MOSFET N-Ch+Z-Dio 600V 18A 150W 0,2R TO220
    N-channel 600 V, 0.175 O typ., 18 A FDmesh II Plus™ low Qg Power MOSFETsFeatures• Extremely low gate charge and input capacitance• Lower RDS(on) x area vs previous generation• Low gate input resistance• 100% avalanche tested• Zener-protected• Extremely high dv/dt and avalanche capabilitiesApplications• Switching applications
    • Shop: reichelt elektronik
    • Price: 2.60 EUR excl. shipping
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    Nähmaschinenmotor 250 W Kupplungsmotor für Industrienähmaschinen 1/3hp 2850 rpm
    "Produktbeschreibung:Die technischen Parameter dieser Maschine sind wie folgt:Leistung: 250WMotordrehzahl: 2850 U / minSpannung: 220VHertz: 50 HzLeistung: 1 / 3hpBruttogewicht / Nettogewicht: 16,5 / 15,5 kgGröße: 40x30x25cmVolumen: 0,03 CBMAnzahl der Phasen: EinphasigStecker: T15Anwendbar industriell: Nähmaschinen (außer extrem dicken Materialnähmaschinen)Material: GusseisenHergestellt aus Gusseisen, Kupfer-Aluminium-Verbundwerkstoff, Lackdraht, Siliziumstahlblech usw., langlebig Packliste:Ein Motor mit NetzkabelSatz BefestigungsschraubenEin Satz stoßdämpfender GummipadsFeste NetzkabelkarteEin GürtelschutzHandbuch______________________________________________________The technical parameters of this machine are as follows:Power: 250WEngine speed: 2850 rpmVoltage: 220VHertz: 50HzHorsepower: 1/3hpGross weight/net weight: 16.5/15.5KGSize: 40x30x25cmVolume: 0.03CBMNumber of phases: Single phasePlug: T15Applicable industrial: Sewing machines (except extremely thick material sewing
    • Shop: ManoMano
    • Price: 140.98 EUR excl. shipping
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    IRFL4105PBF - MOSFET N-Ch 55V 5,2A 0,045R SOT223
    HEXFET® Power MOSFETSurface MountAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt RatingFast SwitchingFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide varietyof applications.
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    IRFL4310PBF - MOSFET N-Kanal, 100 V, 2,2 A, Rds(on) 0,2 Ohm, SOT223
    HEXFET® Power MOSFETSurface MountDynamic dv/dt RatingFast SwitchingEase of ParallelingAdvanced Process TechnologyUltra Low On-ResistanceLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.60 EUR excl. shipping
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    IRLL024NPBF - MOSFET N-LogL 55V 4,4A 0,065R SOT223
    HEXFET® Power MOSFETSurface MountAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt RatingFast SwitchingFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs arewell known for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.75 EUR excl. shipping
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    IRFL024NPBF - MOSFET N-Ch 55V 4A 0,075R SOT223
    HEXFET® Power MOSFETSurface MountAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt RatingFast SwitchingFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.50 EUR excl. shipping
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    IRFR1010ZPBF - MOSFET N-Ch 55V 42A 0,0075R TO252AA
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatingtemperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficientand reliable device for use in a wide variety applications.
    • Shop: reichelt elektronik
    • Price: 2.00 EUR excl. shipping
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    IRFL014NPBF - MOSFET N-Ch 55V 2,7A 0,16R SOT223
    HEXFET® Power MOSFETSurface MountAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt RatingFast SwitchingFully Avalanche RatedLead-FreeDescriptionFifth Generation HEXFET® MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.60 EUR excl. shipping
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    IRFL024ZPBF - MOSFET N-Ch 55V 5,1A 0,0575R SOT223
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance150°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitiveavalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.52 EUR excl. shipping
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    IRFR120ZPBF - MOSFET N-Ch 100V 8,7A 0,19R TO252AA
    HEXFET® Power MOSFETFeaturesAdvanced Process TechnologyUltra Low On-Resistance175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxLead-FreeDescriptionThis HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
    • Shop: reichelt elektronik
    • Price: 0.59 EUR excl. shipping

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