767 Results for : speeds

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    DN3535N8-G - MOSFET, N-CH, SOT-89, 350 V, 0,2 A, 1,6 W
    DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 10 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 300 mA
    • Shop: reichelt elektronik
    • Price: 0.70 EUR excl. shipping
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    DN2530N8-G - MOSFET, N-CH, SOT-89, 300 V, 0,2 A, 1,6 W
    The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 300 V• RDS: 12 Ohm• Ugs: -1,0 ... -3,5 V
    • Shop: reichelt elektronik
    • Price: 0.90 EUR excl. shipping
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    DN3135K1-G - MOSFET, N-CH, SOT-23, 350 V, 0,18 A, 0,36 W
    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 350 V• RDS: 35 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 180 mA
    • Shop: reichelt elektronik
    • Price: 0.55 EUR excl. shipping
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    DN3545N8-G - MOSFET, N-CH, TO-89, 450 V, 0,2 A, 1,6 W
    These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 450 V• RDS: 20 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 200 mA
    • Shop: reichelt elektronik
    • Price: 0.77 EUR excl. shipping
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    DN2540N3-G - MOSFET, N-Kanal, 400 V, 0,15 A, Rds(on) 17 Ohm, TO-92
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 0.98 EUR excl. shipping
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    DN2540N5-G - MOSFET, N-CH, TO-220, 400 V, 0,15 A, 15 W
    DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 400 V• RDS: 25 Ohm• Ugs (off): -1,5 ... -3,5 V• Ic: 150 mA
    • Shop: reichelt elektronik
    • Price: 1.80 EUR excl. shipping
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    Patil:Design and Structural Analysis of
    Erscheinungsdatum: 08.04.2018, Medium: Taschenbuch, Einband: Kartoniert / Broschiert, Titel: Design and Structural Analysis of Multi-Speeds Helical Gear Box, Autor: Patil, Hiralal, Verlag: LAP Lambert Academic Publishing, Sprache: Englisch, Rubrik: Maschinenbau // Fertigungstechnik, Seiten: 168, Informationen: Paperback, Gewicht: 267 gr, Verkäufer: averdo
    • Shop: averdo
    • Price: 55.89 EUR excl. shipping
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    DN2450K4-G - MOSFET, N-CH, DPAK, 500 V, 0,7 A, 2,5 W
    These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.• High input impedance• Low input capacitance• Fast switching speeds• Low on-resistance• Free from secondary breakdown• Low input and output leakage Technical Data: • BVdsx: 500 V• Ugs (off): -1,5 ... 3,5 V• RDS: 10 Ohm• Ic: 700 mA
    • Shop: reichelt elektronik
    • Price: 0.57 EUR excl. shipping
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    Topeak: All Speeds Chain Tools Kettennieter
    Hochwertiger Kettenieter für den Einsatz mit allen Multi-Speed- Pin-Typ Ketten , einschließlich Campagnolo ® 11 Speed Ketten . Integrierter Kettenhaken hält die Kettenglieder bei der Montage. * Campagnolo ® ist eine eingetragene Marke von Campagnolo Srl
    • Shop: fahrrad24
    • Price: 23.00 EUR excl. shipping
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    D-Link D-Link DAP-1665 Wireless AC1200 Parallel-Band Access Point
    The DAP-1665 Wireless AC1200 Dual-Band Access Point is a fast and versatile solution for bringing Wireless AC to your existing wired network, or extending your current wireless network. The latest 802.11ac technology delivers combined speeds of up to 1200 Mbps, so you can create a high-speed wireless link between networks, or quickly transfer large files wirelessly between computers on the same network.> Highlights- Latest 802.11ac wireless technology with combined wireless speeds of up to 1200 Mbps- Backwards-compatible with 802.11n/g/b/a Clients- Two external antennas increase range- Gigabit LAN port for wired connections up to 1000 Mbps> Produkttyp- Accesspoint> Antenne- Gewinn: 5 db> Datenübertragung- WLAN Standard: IEEE 802.11a - WiFi 2, IEEE 802.11ac - WiFi 5, IEEE 802.11b - WiFi 1, IEEE 802.11g - WiFi 3, IEEE 802.11n - WiFi 4> Grundeigenschaften- Farbe: Weiß- Höhe: 27.8 mm- Länge/Tiefe: 108 mm- Breite: 147 mm- Gewicht: 222 g
    • Shop: mcbuero
    • Price: 92.06 EUR excl. shipping

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